1 transistor 2sc5473 (tentative) silicon npn epitaxial planer type for low-voltage low-noise high-frequency oscillation n features l high transition frequency f t . l high gain of 8.9db and low noise of 1.8db at 3v. l optimum for rf amplification of a portable telephone and pager. l s-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i c p c t j t stg ratings 9 6 1 30 150 150 C55 ~ +150 unit v v v ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio collector output capacitance transition frequency noise figure foward transfer gain symbol i cbo i ebo h fe c ob f t nf | s 21e | 2 conditions v cb = 9v, i e = 0 v eb = 1v, i c = 0 v ce = 3v, i c = 10ma v cb = 3v, i e = 0, f = 1mhz v ce = 3v, i c = 10ma, f = 2ghz v ce = 3v, i c = 3ma, f = 1.5ghz v ce = 3v, i c = 10ma, f = 2ghz min 80 typ 0.4 12.0 1.8 8.9 max 1 1 200 unit m a m a pf ghz db db unit: mm 1:emitter 2:collector 3:emitter eiaj:scC82 4:base s-mini type package marking symbol : 3a 2.1 0.1 2.0 0.1 0.3 +0.1 0 0.65 0.65 1.3 0.1 0.7 0.1 0.5 0.1 0.2 0 to 0.1 1.25 0.10 0.425 0.425 0.15 +0.10 ?.05 0.2 0.1
2 transistor 2sc5473 h fe i c f t i c | s 21e | 2 i c nf i c 0.1 1 10 100 0.3 3 30 0 240 200 160 120 80 40 ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe 1 3 10 30 100 0 14 12 4 10 8 2 6 v ce =3v collector current i c ( ma ) transition frequency f t ( ghz ) 1 3 10 30 100 0 10 8 6 4 2 v ce =3v f=2ghz collector current i c ( ma ) forward transfer gain |s21e| 2 ( db ) 0.1 0.3 1 3 10 0 5 4 3 2 1 v ce =3v f=1.5ghz collector current i c ( ma ) noise figure nf ( db )
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